Enhancement of thermoelectric figure-of-merit by resonant states of aluminium doping in lead selenide

Qinyong Zhang; Hui Wang; Weishu Liu; Hengzhi Wang; Bo Yu; Qian Zhang; Zhiting Tian; George Ni; Sangyeop Lee; Keivan Esfarjani; Gang Chen; Zhifeng Ren

doi:10.1039/C1EE02465E

Enhancement of thermoelectric figure-of-merit by resonant states of aluminium doping in lead selenide

Qinyong Zhang,^ab Hui Wang,^b Weishu Liu,^b Hengzhi Wang,^b Bo Yu,^b Qian Zhang,^b Zhiting Tian,^c George Ni,^c Sangyeop Lee,^c Keivan Esfarjani,^c Gang Chen*^c and Zhifeng Ren*^b

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* Corresponding authors

^a School of Material Science and Engineering, Xihua University, Chengdu, Sichuan, P. R. China

^b Department of Physics, Boston College, Chestnut Hill, Massachusetts, USA
E-mail: renzh@bc.edu
Fax: +1-617-552-8478
Tel: +1-617-552-2832

^c Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
E-mail: gchen2@mit.edu
Fax: +1-617-324-5519
Tel: +1-617-253-0006

Abstract

By adding aluminium (Al) into lead selenide (PbSe), we successfully prepared n-type PbSe thermoelectric materials with a figure-of-merit (ZT) of 1.3 at 850 K. Such a high ZT is achieved by a combination of high Seebeck coefficient caused by very possibly the resonant states in the conduction band created by Al dopant and low thermal conductivity from nanosized phonon scattering centers.

This article is part of the themed collection: Thermoelectrics

Energy & Environmental Science

Enhancement of thermoelectric figure-of-merit by resonant states of aluminium doping in lead selenide

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Enhancement of thermoelectric figure-of-merit by resonant states of aluminium doping in lead selenide

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