Issue 6, 2012
From the journal:

Dalton Transactions

Ru cyclooctatetraene precursors for MOCVD†

Tatsuya Ando,a   Naoki Nakata,ab   Kazuharu Suzuki,b   Takahiro Matsumotoac  and  Seiji Ogo*acd  

* Corresponding authors

a Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka, Japan
E-mail: ogotcm@mail.cstm.kyushu-u.ac.jp
Fax: +81-92-802-2823
Tel: +81-92-802-2818

b Specialty Chemicals Section, Technology Development Department, Technical Division, Tanaka Kikinzoku Kogyo K. K., 22 Wadai, Tsukuba, Ibaraki, Japan

c International Institute for Carbon-Neutral Energy Research (I2CNER), 744 Moto-oka, Nishi-ku, Fukuoka, Japan

d Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Kawaguchi Center Building, 4-1-8 Honcho, Kawaguchi-shi, Saitama, Japan

Abstract

A series of Ru0 cyclooctatetraene complexes are presented with optimal properties for MOCVD (metal organic chemical vapour deposition) applications, including combinations of the two lowest melting points and lowest decomposition temperatures yet reported for such materials. The compounds are easy to handle and lead to highly conformal thin films of Ru on SiO2 features; even within holes with aspect ratios of 40 : 1. SEM, AFM and XPS studies confirm the near ideal nature of the resulting conformal thin film.

Graphical abstract: Ru cyclooctatetraene precursors for MOCVD

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Article information

DOI
https://doi.org/10.1039/C1DT11454A
Article type
Paper
Submitted
02 Aug 2011
Accepted
05 Sep 2011
First published
12 Oct 2011

Dalton Trans., 2012,41, 1678-1682

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Ru cyclooctatetraene precursors for MOCVD

T. Ando, N. Nakata, K. Suzuki, T. Matsumoto and S. Ogo, Dalton Trans., 2012, 41, 1678 DOI: 10.1039/C1DT11454A

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