Issue 41, 2012

Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors

Abstract

Insulating and semiconducting molecular phosphonic acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs) for low-power, low-cost flexible electronics. Multifunctional SAMs on ultrathin metal oxides, such as hafnium oxide and aluminum oxide, are shown to enable (1) low-voltage (sub 2 V) OFETs through dielectric and interface engineering on rigid and plastic substrates, (2) simultaneous one-component modification of source–drain and dielectric surfaces in bottom-contact OFETs, and (3) SAM-FETs based on molecular monolayer semiconductors. The combination of excellent dielectric and interfacial properties results in high-performance OFETs with low-subthreshold slopes down to 75 mV dec−1, high Ion/Ioff ratios of 105–107, contact resistance down to 700 Ω cm, charge carrier mobilities of 0.1–4.6 cm2 V−1 s−1, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic and polymer semiconductors.

Graphical abstract: Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors

Article information

Article type
Perspective
Submitted
14 May 2012
Accepted
14 Jun 2012
First published
14 Jun 2012

Phys. Chem. Chem. Phys., 2012,14, 14110-14126

Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors

H. Ma, O. Acton, D. O. Hutchins, N. Cernetic and A. K.-Y. Jen, Phys. Chem. Chem. Phys., 2012, 14, 14110 DOI: 10.1039/C2CP41557G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements