Synthesis, photoluminescence and field emission properties of well aligned/well patterned conical shape GaN nanorods†
Abstract
Vertically well aligned, well patterned and high density conical shaped GaN
* Corresponding authors
a
Research Centre of Materials Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China
E-mail:
cbcao@bit.edu.cn
Fax: +86 10 6891 2001
Tel: +86 10 6891 3792
b Department of Materials Science and Engineering, Beijing National Centre of Electron Microscopy, Tsinghua University, Beijing 100084, People's Republic of China
c State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China
Vertically well aligned, well patterned and high density conical shaped GaN
G. Nabi, C. Cao, S. Hussain, W. S. Khan, R. R. Sagar, Z. Ali, F. K. Butt, Z. Usman and D. Yu, CrystEngComm, 2012, 14, 8492 DOI: 10.1039/C2CE25800E
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