Growth of high quality GaN on a novel designed bonding-thinned template by HVPE
Abstract
In this paper, GaN films were grown on a novel designed template via
* Corresponding authors
a
State Key Lab of Crystal Materials, Shandong University, Jinan, People's Republic of China
E-mail:
xphao@sdu.edu.cn
Fax: +8653188364864
Tel: +8653188366218
In this paper, GaN films were grown on a novel designed template via
H. Zhang, Y. Shao, L. Zhang, X. Hao, Y. Wu, X. Liu, Y. Dai and Y. Tian, CrystEngComm, 2012, 14, 4777 DOI: 10.1039/C2CE25363A
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content