The evolution of Ge nanostructures growth on silicon substrate by reduction of GeO2†
Abstract
Various shaped and sized Ge
* Corresponding authors
a
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R. O. C
E-mail:
cylee@mx.nthu.edu.tw
b Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, R. O. C
c Center for Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University, Hsinchu, Taiwan, R. O. C
Various shaped and sized Ge
H. Wu, H. Chiu and C. Lee, CrystEngComm, 2012, 14, 2190 DOI: 10.1039/C2CE06485E
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