The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a γ-Al2O3buffer layer
Abstract
The structural, optical and electrical properties of the c-plane ZnO epitaxial films grown by
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* Corresponding authors
a
Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
E-mail:
chsu@nsrrc.org.tw, wfhsieh@mail.nctu.edu.tw
b Department of Photonics & Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan, Taiwan
c Department of Photonics and Institute of Electro-Optical Engineering National Chiao Tung University, Hsinchu, Taiwan
d Department of Materials Science & Engineering, National Tsing Hua University, Hsinchu, Taiwan
e Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
f Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
The structural, optical and electrical properties of the c-plane ZnO epitaxial films grown by
W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu, W. F. Hsieh, W. C. Lee, M. Hong and J. Kwo, CrystEngComm, 2012, 14, 1665 DOI: 10.1039/C2CE06218F
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