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Issue 3, 2012
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Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

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Abstract

Large disc-like ovalene diimides (ODI and ODI-CN) were prepared for the first time mainly via Diels–Alder cycloaddition reactions at the bay regions of bisanthene. The CN-substituted ovalene diimide (ODI-CN) exhibited typical n-type semiconducting behaviour in solution processing OFET devices, showing high electron mobility up to 1.0 cm2 V−1 s−1 in nitrogen atmosphere and 0.51 cm2 V−1 s−1 in air together with good device stability.

Graphical abstract: Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

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Publication details

The article was received on 29 Sep 2011, accepted on 14 Nov 2011 and first published on 15 Nov 2011


Article type: Edge Article
DOI: 10.1039/C1SC00739D
Chem. Sci., 2012,3, 846-850

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    Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

    J. Li, J. Chang, H. S. Tan, H. Jiang, X. Chen, Z. Chen, J. Zhang and J. Wu, Chem. Sci., 2012, 3, 846
    DOI: 10.1039/C1SC00739D

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