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Issue 8, 2012
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Nanoscale charge distribution and energy band modification in defect-patterned graphene

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Abstract

Defects were introduced precisely to exfoliated graphene (G) sheets on a SiO2/n+ Si substrate to modulate the local energy band structure and the electron pathway using solution-phase oxidation followed by thermal reduction. The resulting nanoscale charge distribution and band gap modification were investigated by electrostatic force microscopy and spectroscopy. A transition phase with coexisting submicron-sized metallic and insulating regions in the moderately oxidized monolayer graphene were visualized and measured directly. It was determined that the delocalization of electrons/holes in a graphene “island” is confined by the surrounding defective C–O matrix, which acts as an energy barrier for mobile charge carriers. In contrast to the irreversible structural variations caused by the oxidation process, the electrical properties of graphene can be restored by annealing. The defect-patterned graphene and graphene oxide heterojunctions were further characterized by electrical transport measurement.

Graphical abstract: Nanoscale charge distribution and energy band modification in defect-patterned graphene

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Supplementary files

Article information


Submitted
09 Jan 2012
Accepted
22 Feb 2012
First published
27 Feb 2012

Nanoscale, 2012,4, 2651-2657
Article type
Paper

Nanoscale charge distribution and energy band modification in defect-patterned graphene

S. Wang, R. Wang, X. Wang, D. Zhang and X. Qiu, Nanoscale, 2012, 4, 2651
DOI: 10.1039/C2NR00055E

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