Reduced charge fluctuations in individual SnO2 nanowires by suppressed surface reactions

Junghwan Huh; Min-Kyu Joo; Doyoung Jang; Jong-Heun Lee; Gyu Tae Kim

doi:10.1039/C2JM35361J

Reduced charge fluctuations in individual SnO₂nanowires by suppressed surface reactions†

Junghwan Huh,‡^ab Min-Kyu Joo,^ac Doyoung Jang,^d Jong-Heun Lee^e and Gyu Tae Kim*^a

* Corresponding authors

^a School of Electrical Engineering, Korea University, Seoul 136-701, Korea
E-mail: gtkim@korea.ac.kr
Fax: +82-2-953-3780
Tel: +82-2-3290-3250

^b Semiconductor Research Institute, Korea University, Seoul 136-701, Korea

^c IMEP-LAHC, Grenoble INP-MINATEC Grenoble, France

^d Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Korea

^e Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea

Abstract

The interactions between metal oxide nanowires and molecular species can significantly affect the electrical properties of metal oxide nanowires. A passivation process is needed to stabilize the electrical characteristics, regardless of the environmental changes. Herein, we investigated the passivation effects of a polymethyl methacrylate (PMMA) layer on SnO₂ nanowire (NW) field-effect transistors (FETs). As a result of the PMMA coating, the electrical properties of the SnO₂ NW FETs improved. The electrical noise behavior in both non-passivated and passivated devices can be described with the carrier number fluctuation model associated with the trapping and the release of charge carriers at the surface. The non-passivated devices exhibited higher noise levels than those of the passivated devices. These results demonstrate that surface passivation can lead to the suppression of dynamic responses (electron trapping/release events and scattering fluctuations).

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Article information

DOI: https://doi.org/10.1039/C2JM35361J
Article type: Paper
Submitted: 09 Aug 2012
Accepted: 10 Sep 2012
First published: 11 Sep 2012

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J. Mater. Chem., 2012,22, 24012-24016

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Reduced charge fluctuations in individual SnO₂ nanowires by suppressed surface reactions

J. Huh, M. Joo, D. Jang, J. Lee and G. T. Kim, J. Mater. Chem., 2012, 22, 24012 DOI: 10.1039/C2JM35361J

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