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Issue 33, 2012
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Electron injection enhancement by a Cs-salt interlayer in ambipolar organic field-effect transistors and complementary circuits

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Abstract

Here we report the effects of a Cs-salt based charge injection interlayer on the characteristics of top-gate/bottom-contact (TG/BC) ambipolar polymer OFETs with poly(thienylenevinylene-co-phthalimide)s functionalized at the imide nitrogen with dodecyl (PTVPhI-C12). P-channel dominant PTVPhI-C12 ambipolar OFETs showed both an improved electron injection and blocked hole injection properties by insertion of a thermally deposited thin CsF interlayer between Au source/drain electrodes and the organic semiconductor. X-ray and UV photoelectron spectroscopy results exhibited that the work-function of the Au electrode progressively changed from −4.5 eV to −3.9 eV and the Fermi levels of PTVPhI-C12 concomitantly moved towards the LUMO level of the conjugated polymer with an increase of CsF thickness from 0 nm to 1.5 nm, respectively. Both the shifting of Au work-function and the molecular doping of PTVPhI-C12 by insertion of CsF provide an order of magnitude improved n-channel properties in p-channel dominant ambipolar PTVPhI-C12 OFETs. In the end, the characteristics of the PTVPhI-C12 complementary inverter were improved (gain > 23) by a selective deposition and optimization of the CsF interlayer thickness on the n-channel region of ambipolar CMOS inverters.

Graphical abstract: Electron injection enhancement by a Cs-salt interlayer in ambipolar organic field-effect transistors and complementary circuits

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Publication details

The article was received on 30 Apr 2012, accepted on 23 Jun 2012 and first published on 26 Jun 2012


Article type: Paper
DOI: 10.1039/C2JM32721J
J. Mater. Chem., 2012,22, 16979-16985

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    Electron injection enhancement by a Cs-salt interlayer in ambipolar organic field-effect transistors and complementary circuits

    D. Khim, K. Baeg, J. Kim, J. Yeo, M. Kang, P. S. K. Amegadzea, M. Kim, J. Cho, J. H. Lee, D. Kim and Y. Noh, J. Mater. Chem., 2012, 22, 16979
    DOI: 10.1039/C2JM32721J

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