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Issue 30, 2012
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Recent advances in high mobility donor–acceptor semiconducting polymers

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Abstract

A combination of improved understanding of molecular design criteria and polymer purification techniques, as well as optimised fabrication techniques and device surface treatments, have driven recent advances in the performance of semiconducting polymers for transistor applications. This development has allowed polymer-based devices to reach parity with the best values obtained for small molecule evaporated devices. Herein, we present the most recent work on solution processable high mobility donor–acceptor type polymers. We discuss the approaches that have been taken to improve both hole (and electron) mobility further. We will not only focus on chemical design criteria, but also describe certain processing approaches which have led to impressive hole mobilities of up to 5.5 cm2 V−1 s−1.

Graphical abstract: Recent advances in high mobility donor–acceptor semiconducting polymers

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Article information


Submitted
28 Mar 2012
Accepted
18 May 2012
First published
31 May 2012

J. Mater. Chem., 2012,22, 14803-14813
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Recent advances in high mobility donor–acceptor semiconducting polymers

L. Biniek, B. C. Schroeder, C. B. Nielsen and I. McCulloch, J. Mater. Chem., 2012, 22, 14803
DOI: 10.1039/C2JM31943H

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