High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene

Abstract

A novel thienoacene compound, dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene (C6-DBTDT), is developed as a p-type organic semiconductor for high-performance organic field-effect transistors. Insertion of an acceptor material at the contact interface enables substantial reduction in the threshold voltage and hysteresis behavior, and the field-effect mobilities of 2.5 and 3.1 cm² V⁻¹ s⁻¹ are achieved for the C6-DBTDT film vacuum-deposited at room temperature and 80 °C, respectively.