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Issue 16, 2012
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High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene

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Abstract

A novel thienoacene compound, dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene (C6-DBTDT), is developed as a p-type organic semiconductor for high-performance organic field-effect transistors. Insertion of an acceptor material at the contact interface enables substantial reduction in the threshold voltage and hysteresis behavior, and the field-effect mobilities of 2.5 and 3.1 cm2 V−1 s−1 are achieved for the C6-DBTDT film vacuum-deposited at room temperature and 80 °C, respectively.

Graphical abstract: High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene

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Supplementary files

Article information


Submitted
11 Feb 2012
Accepted
05 Mar 2012
First published
19 Mar 2012

J. Mater. Chem., 2012,22, 7715-7717
Article type
Communication

High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene

Y. Miyata, E. Yoshikawa, T. Minari, K. Tsukagoshi and S. Yamaguchi, J. Mater. Chem., 2012, 22, 7715
DOI: 10.1039/C2JM30840A

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