Jump to main content
Jump to site search

Issue 25, 2012
Previous Article Next Article

Understanding the nature of remnant polarization enhancement, coercive voltage offset and time-dependent photocurrent in ferroelectric films irradiated by ultraviolet light

Author affiliations

Abstract

It is widely accepted that ultraviolet (UV) light illumination of ferroelectric films can result in polarization imprint because of the accumulation of photoinduced carriers on the domain walls and/or on the electrode–film interfaces, and then the decrease of the reversible remnant polarization. In this paper, however, the enhancement of remnant polarization was exhibited in Pb(Zr0.2Ti0.8)O3 (PZT) films when irradiated by UV light. The time-dependent photocurrent and hysteresis loop of PZT films indicated that the transient behavior of photocurrent and coercive voltage offset were closely related to the polarization states, moveable defect charge (mainly oxygen vacancy) density, and aging time. Based on the observation of piezoresponse force microscopy, the mechanism behind the observed photoelectric and ferroelectric phenomena was proposed.

Graphical abstract: Understanding the nature of remnant polarization enhancement, coercive voltage offset and time-dependent photocurrent in ferroelectric films irradiated by ultraviolet light

Back to tab navigation

Publication details

The article was received on 04 Apr 2012, accepted on 16 Apr 2012 and first published on 18 Apr 2012


Article type: Paper
DOI: 10.1039/C2JM32102E
J. Mater. Chem., 2012,22, 12592-12598

  •   Request permissions

    Understanding the nature of remnant polarization enhancement, coercive voltage offset and time-dependent photocurrent in ferroelectric films irradiated by ultraviolet light

    D. Cao, C. Wang, F. Zheng, L. Fang, W. Dong and M. Shen, J. Mater. Chem., 2012, 22, 12592
    DOI: 10.1039/C2JM32102E

Search articles by author

Spotlight

Advertisements