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Issue 34, 2012
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Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy

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Abstract

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si–Si backbond and Si–H bond propagation which controls the process at lower temperatures (T < 200 °C). At high temperatures (T ≥ 200 °C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.

Graphical abstract: Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy

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Supplementary files

Article information


Submitted
24 May 2012
Accepted
09 Jul 2012
First published
12 Jul 2012

Phys. Chem. Chem. Phys., 2012,14, 11877-11881
Article type
Communication

Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy

M. Y. Bashouti, K. Sardashti, J. Ristein and S. H. Christiansen, Phys. Chem. Chem. Phys., 2012, 14, 11877
DOI: 10.1039/C2CP41709J

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