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Issue 35, 2012
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Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide

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Abstract

Recently, the number of studies concerning organic memory devices has grown rapidly due to increase in the demand for electronic devices. Among the organic memory devices, the development of organic nonvolatile memory materials and devices is becoming an important research topic due to their low power consumption.

Graphical abstract: Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide

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Supplementary files

Article information


Submitted
10 Feb 2012
Accepted
06 Mar 2012
First published
07 Mar 2012

Chem. Commun., 2012,48, 4235-4237
Article type
Communication

Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide

C. Jin, J. Lee, E. Lee, E. Hwang and H. Lee, Chem. Commun., 2012, 48, 4235 DOI: 10.1039/C2CC30973D

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