Silicon nanowire arrays-induced graphene oxide reduction under UV irradiation
Abstract
This paper reports on efficient UV irradiation-induced
* Corresponding authors
a
Institut de Recherche Interdisciplinaire (IRI, USR-3078), Université de Lille1, Parc de la Haute Borne, 50 avenue de Halley, BP 70478, Villeneuve d'Ascq, France
E-mail:
rabah.boukherroub@iri.univ-lille1.fr
Fax: +33 3 62 53 17 01
Tel: +33 3 62 53 17 24
b Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR-CNRS 8520, Cité Scientifique, Villeneuve d'Ascq, France
c Unité de Développement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Algiers, Algeria
d Materials Science Division, North East Institute of Science and Technology (NEIST), CSIR, Jorhat, Assam, India
e Laboratoire de Physique Quantique et Systèmes Dynamiques, Département de Physique, Université de Sétif, Sétif, Algeria
This paper reports on efficient UV irradiation-induced
O. Fellahi, M. R. Das, Y. Coffinier, S. Szunerits, T. Hadjersi, M. Maamache and R. Boukherroub, Nanoscale, 2011, 3, 4662 DOI: 10.1039/C1NR10970G
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