Jump to main content
Jump to site search

Issue 32, 2011
Previous Article Next Article

Enhanced polymeric lithography resists via sequential infiltration synthesis

Author affiliations

Abstract

Etch resistance of two commonly used lithography resists is increased significantly by sequential infiltration synthesis (SIS). Exposing films to trimethyl-aluminum and water with long dosage times infiltrates the bulk of the film with alumina, which renders them dramatically more resistant to plasma etching with no degradation to the patterns. Enhanced etch resistance eliminates the need for an intermediate hard mask and the concomitant costs and pattern fidelity losses. Moreover, by allowing for thinner resist films, this approach can improve the final pattern resolution.

Graphical abstract: Enhanced polymeric lithography resists via sequential infiltration synthesis

Back to tab navigation

Supplementary files

Article information


Submitted
31 May 2011
Accepted
22 Jun 2011
First published
06 Jul 2011

J. Mater. Chem., 2011,21, 11722-11725
Article type
Communication

Enhanced polymeric lithography resists via sequential infiltration synthesis

Y. Tseng, Q. Peng, L. E. Ocola, D. A. Czaplewski, J. W. Elam and S. B. Darling, J. Mater. Chem., 2011, 21, 11722
DOI: 10.1039/C1JM12461G

Search articles by author

Spotlight

Advertisements