Non-volatile transistor memory fabricated using DNA and eliminating influence of mobile ions on electric properties
Abstract
An organic thin-film transistor (OTFT) memory was fabricated using
* Corresponding authors
a
Department of Image & Materials Science, Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba, Japan
E-mail:
koban@faculty.chiba-u.jp
Fax: +81-43-290-3490
Tel: +81-43-290-3458
b
Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, Japan
E-mail:
sei-uemura@aist.go.jp
Fax: +81-29-861-4536
Tel: +81-29-861-4516
An organic thin-film transistor (OTFT) memory was fabricated using
T. Yukimoto, S. Uemura, T. Kamata, K. Nakamura and N. Kobayashi, J. Mater. Chem., 2011, 21, 15575 DOI: 10.1039/C1JM12229K
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