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Issue 32, 2011
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Multicolor graphenenanoribbon/semiconductor nanowire heterojunction light-emitting diodes

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We report novel graphene nanoribbon (GNR)/semiconductor nanowire (SNW) heterojunction light-emitting diodes (LEDs) for the first time. In the device, the GNR and SNW have face-to-face contact with each other, which has the merits of a larger active region and smaller series resistance, and may benefit high-efficiency electroluminescence and even electrically driven lasers in the future. ZnO, CdS, and CdSe NWs were employed in our case. At forward biases, the GNR/SNW heterjunction LEDs could emit light with wavelengths varying from ultraviolet (380 nm) to green (513 nm) to red (705 nm), which were determined by the band-gaps of the involved SNWs. The mechanism of light emitting for the GNR/SNW heterojunction LEDs was discussed. Our work opens new routes to developing diverse graphene-based nano-optoelectronic devices, which are basic components in integrated optoelectronic system. Besides, the novel graphene/SNW hybrid devices, by taking advantage of both graphene and SNW, will be promising candidates for use in applications such as high-sensitivity sensor and transparent flexible devices in the future.

Graphical abstract: Multicolor graphene nanoribbon/semiconductor nanowire heterojunction light-emitting diodes

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Supplementary files

Article information

06 Apr 2011
17 May 2011
First published
01 Jul 2011

J. Mater. Chem., 2011,21, 11760-11763
Article type

Multicolor graphene nanoribbon/semiconductor nanowire heterojunction light-emitting diodes

Y. Ye, L. Gan, L. Dai, H. Meng, F. Wei, Y. Dai, Z. Shi, B. Yu, X. Guo and G. Qin, J. Mater. Chem., 2011, 21, 11760
DOI: 10.1039/C1JM11441G

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