Low-temperature rapid synthesis of high-quality pristine or boron-doped graphenevia Wurtz-type reductive coupling reaction†
Abstract
High-quality
* Corresponding authors
a
CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, P.R. China
E-mail:
huangfq@mail.sic.ac.cn
Fax: +86-21-5241-6360
Tel: +86-21-5241-1620
b Graduate School of the Chinese Academy of Sciences, Beijing, P.R. China
c State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, P.R. China
High-quality
X. Lü, J. Wu, T. Lin, D. Wan, F. Huang, X. Xie and M. Jiang, J. Mater. Chem., 2011, 21, 10685 DOI: 10.1039/C1JM11184A
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