Jump to main content
Jump to site search

Issue 35, 2011
Previous Article Next Article

Intrinsic memory behavior of rough silicon nanowires and enhancement via facile Ag NPs decoration

Author affiliations

Abstract

In inorganic nanowire memory, both physical features rendered during synthesis and integration processes and intrinsic properties of materials are important because they present appropriate schemes for facile fabrication of an excellent memory device. We demonstrate that silicon nanowires (Si NWs) synthesized by an electroless etching (EE) method intrinsically present memory behavior via charge trapping of water molecules due to the rough surface created during synthesis. Additionally, using an electrochemical reaction of silicon with AgNO3 solution, which produces Ag nanoparticles (NPs) with a blocking SiO2 layer, we easily achieve a Ag NP hybrid Si NW memory device.

Graphical abstract: Intrinsic memory behavior of rough silicon nanowires and enhancement via facile Ag NPs decoration

Back to tab navigation

Supplementary files

Article information


Submitted
30 Jan 2011
Accepted
30 Jun 2011
First published
04 Aug 2011

J. Mater. Chem., 2011,21, 13256-13261
Article type
Paper

Intrinsic memory behavior of rough silicon nanowires and enhancement via facile Ag NPs decoration

J. Choi, J. Sung, K. Moon, J. Jeon, Y. H. Kang, T. I. Lee, C. Park and J. Myoung, J. Mater. Chem., 2011, 21, 13256
DOI: 10.1039/C1JM10473J

Search articles by author

Spotlight

Advertisements