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Issue 31, 2011
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Switchable photoconductivity of quantum dot films using cross-linking ligands with light-sensitive structures

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Abstract

This paper describes the use of a diarylethylene (DAE) ligand, which adopts structures that are sensitive to the wavelength of light, to cross-link films of CdSe quantum dots (QDs) within electrical junctions with photoswitchable conductivity. These QD-DAE films are deposited on indium-tin-oxide/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (ITO/PEDOT:PSS) electrodes and have eutectic Ga-In top-contacts. The photocurrent density of the cross-linked QD films is enhanced by a factor of 6.5 (averaged over all applied voltages) when the DAE ligand is switched from its open, non-conductive form (by illumination with 500–650 nm light) to its closed, conductive form (by illumination with 300–400 nm light). This enhancement is accomplished by changing the inter-particle electronic coupling, not the inter-particle distance. Identical QD films cross-linked with dibenzenedithiol ligands have a photoconductivity that is insensitive to the wavelength of light.

Graphical abstract: Switchable photoconductivity of quantum dot films using cross-linking ligands with light-sensitive structures

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Article information


Submitted
15 Dec 2010
Accepted
24 Mar 2011
First published
08 Apr 2011

J. Mater. Chem., 2011,21, 11492-11497
Article type
Paper

Switchable photoconductivity of quantum dot films using cross-linking ligands with light-sensitive structures

G. D. Lilly, A. C. Whalley, S. Grunder, C. Valente, M. T. Frederick, J. F. Stoddart and E. A. Weiss, J. Mater. Chem., 2011, 21, 11492
DOI: 10.1039/C0JM04397D

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