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Issue 11, 2011
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Fabrication of micropatterned ferroelectric gamma poly(vinylidene fluoride) film for non-volatile polymer memory

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Abstract

We describe a facile and robust method for fabricating ferroelectric γ-type poly(vinylidene fluoride) (PVDF) thin films useful for non-volatile polymer memory. Our method is based on heating and cooling rate-independent melt-recrystallization of a thin PVDF film confined under a surface-energy-controlled top layer that strictly forbids paraelectric α crystals. Thin and uniform PVDF films with ferroelectric γ crystals consisting of characteristic twisted lamellae are formed with versatile top layers including metals, oxides, and even polymers. Micropatterns of ferroelectric γ PVDF domains isolated by paraelectric α domains are readily developed when pre-patterned top layers are employed. Our ferroelectric films are conveniently incorporated into arrays of either capacitor or transistor-type non-volatile memory units. Arrays of ferroelectric transistors with vacuum deposited pentacene channels are fabricated with micropatterned γ PVDF films. Furthermore, arrays of bottom-gate ferroelectric transistor memories are demonstrated, in which our ferroelectric PVDF film is directly micropatterned during crystallization under the patterned poly(3-hexyl thiophene) active channels.

Graphical abstract: Fabrication of micropatterned ferroelectric gamma poly(vinylidene fluoride) film for non-volatile polymer memory

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Article information


Submitted
20 Aug 2010
Accepted
22 Nov 2010
First published
24 Jan 2011

J. Mater. Chem., 2011,21, 3619-3624
Article type
Paper

Fabrication of micropatterned ferroelectric gamma poly(vinylidene fluoride) film for non-volatile polymer memory

S. J. Kang, I. Bae, J. Choi, Y. J. Park, P. S. Jo, Y. Kim, K. J. Kim, J. Myoung, E. Kim and C. Park, J. Mater. Chem., 2011, 21, 3619
DOI: 10.1039/C0JM02732D

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