Jump to main content
Jump to site search

Issue 37, 2011
Previous Article Next Article

Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor

Author affiliations

Abstract

A new homoleptic sublimable indium(III) guanidinate, (In[(NiPr)2CNMe2]3 (1), was synthesized from a facile high-yield procedure. Compound 1 crystallized is a P[1 with combining macron] space group; a = 10.5989(14) Å, b = 11.0030(15) Å, c = 16.273(2) Å, α = 91.190(2)°, β = 96.561(2)°, γ = 115.555(2)°; R = 3.50%. Thermogravimetric analysis showed 1 to produce elemental indium as a residual mass. Thermolysis in a sealed NMR tube showed carbodiimide and protonated dimethyl amine by 1H NMR. Chemical vapour deposition experiments above 275 °C with air as the reactant gas showed 1 to readily deposit cubic indium oxide with good transparency.

Graphical abstract: Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor

Back to tab navigation

Supplementary files

Publication details

The article was received on 10 May 2011, accepted on 17 Jun 2011 and first published on 16 Aug 2011


Article type: Paper
DOI: 10.1039/C1DT10877H
Dalton Trans., 2011,40, 9425-9430

  •   Request permissions

    Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor

    S. T. Barry, P. G. Gordon, M. J. Ward, M. J. Heikkila, W. H. Monillas, G. P. A. Yap, M. Ritala and M. Leskelä, Dalton Trans., 2011, 40, 9425
    DOI: 10.1039/C1DT10877H

Search articles by author

Spotlight

Advertisements