Issue 37, 2011
From the journal:

Dalton Transactions

Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor†

Seán T. Barry,*a   Peter G. Gordon,a   Matthew J. Ward,b   Mikko J. Heikkila,c   Wesley H. Monillas,d   Glenn P. A. Yap,d   Mikko Ritalac  and  Markku Leskeläc  

* Corresponding authors

a Department of Chemistry, Carleton University, Ottawa, Canada
E-mail: sean_barry@carleton.ca
Tel: +1 613 520 2600 ext. 2244

b Department of Chemistry, University of Western Ontario, London, ON, Canada

c Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, Finland

d Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware, U. S. A.

Abstract

A new homoleptic sublimable indium(III) guanidinate, (In[(NiPr)2CNMe2]3 (1), was synthesized from a facile high-yield procedure. Compound 1 crystallized is a P[1 with combining macron] space group; a = 10.5989(14) Å, b = 11.0030(15) Å, c = 16.273(2) Å, α = 91.190(2)°, β = 96.561(2)°, γ = 115.555(2)°; R = 3.50%. Thermogravimetric analysis showed 1 to produce elemental indium as a residual mass. Thermolysis in a sealed NMR tube showed carbodiimide and protonated dimethyl amine by 1H NMR. Chemical vapour deposition experiments above 275 °C with air as the reactant gas showed 1 to readily deposit cubic indium oxide with good transparency.

Graphical abstract: Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor

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Article information

DOI
https://doi.org/10.1039/C1DT10877H
Article type
Paper
Submitted
10 May 2011
Accepted
17 Jun 2011
First published
16 Aug 2011

Dalton Trans., 2011,40, 9425-9430

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Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor

S. T. Barry, P. G. Gordon, M. J. Ward, M. J. Heikkila, W. H. Monillas, G. P. A. Yap, M. Ritala and M. Leskelä, Dalton Trans., 2011, 40, 9425 DOI: 10.1039/C1DT10877H

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