Semiconducting behavior of type-I Si clathrate K8Ga8Si38†
Abstract
A ternary type-I Si clathrate K8Ga8Si38 has been revealed to be an indirect band gap semiconducting material with an energy gap (Eg) of approximately 0.10 eV, which is much smaller than the calculated Eg value that is 0.15 eV wider than Eg of elemental Si with the