Issue 33, 2011
From the journal:

Physical Chemistry Chemical Physics

Extraction of the surface trap level from photoluminescence: a case study of ZnO nanostructures†

Haiping He,*a   Yanjie Wang,a   Jingrui Wanga  and  Zhizhen Ye*a  

* Corresponding authors

a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
E-mail: hphe@zju.edu.cn, yezz@zju.edu.cn
Fax: +86 571 87952625
Tel: +86 571 87953139

Abstract

Negative thermal quenching of both the excitonic and green emissions is observed in ZnO nanosheets, from which the energy level of surface traps can be extracted based on a model of multi-level transitions. The present study demonstrates a non-destructive and easy method to determine the trap levels in semiconductor nanostructures.

Graphical abstract: Extraction of the surface trap level from photoluminescence: a case study of ZnO nanostructures

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Article information

DOI
https://doi.org/10.1039/C1CP21527B
Article type
Communication
Submitted
12 May 2011
Accepted
10 Jun 2011
First published
11 Jul 2011

Phys. Chem. Chem. Phys., 2011,13, 14902-14905

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Extraction of the surface trap level from photoluminescence: a case study of ZnO nanostructures

H. He, Y. Wang, J. Wang and Z. Ye, Phys. Chem. Chem. Phys., 2011, 13, 14902 DOI: 10.1039/C1CP21527B

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