Crystallization behaviors of an ultra-thin Ga–Sb film

Abstract

Upon decreasing ultra-thin Ga₁₆Sb₈₄ films from 10 to 3 nm, the exponential increase in crystallization temperature and electrical resistance ratio are attributed to increased specific interface-energies and inhomogeneous interfacial strain at the interfaces. The specific interface-energies and strain also stabilize the Sb(Ga) phase and suppress phase-separation of the GaSb phase.