Issue 16, 2011
From the journal:

CrystEngComm

High temperature Raman spectroscopy study on the microstructure of the boundary layer around a growing LiB3O5 crystal

Di Wang,a   Songming Wan,*ab   Shaotang Yin,*a   Qingli Zhang,a   Jinglin You,b   Guochun Zhangc  and  Peizhen Fuc  

* Corresponding authors

a Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, China
E-mail: smwan@aiofm.ac.cn
Fax: +86 0551 5591039
Tel: +86 0551 5591039

b School of Material Science and Engineering, Shanghai University, Shanghai, China

c Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China

Abstract

High temperature Raman spectroscopy has been applied to investigate in situ the microstructure of the high temperature solution near a LiB3O5 (LBO) crystal–solution interface. A preordering boundary layer was found around the interface. In the boundary layer, an isomerization reaction between 3-coordinated and 4-coordinated boron was observed. The reaction led to the formation of B3Ø7 triborate groups, the characteristic structural group involved in the LBO crystal. According to the mechanism, the growth habits of LBO crystal can be understood well.

Graphical abstract: High temperature Raman spectroscopy study on the microstructure of the boundary layer around a growing LiB3O5 crystal

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Article information

DOI
https://doi.org/10.1039/C1CE05375B
Article type
Paper
Submitted
28 Mar 2011
Accepted
23 May 2011
First published
04 Jul 2011

CrystEngComm, 2011,13, 5239-5242

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High temperature Raman spectroscopy study on the microstructure of the boundary layer around a growing LiB3O5 crystal

D. Wang, S. Wan, S. Yin, Q. Zhang, J. You, G. Zhang and P. Fu, CrystEngComm, 2011, 13, 5239 DOI: 10.1039/C1CE05375B

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