Microstructural analysis and phase transformation of CuInS2 thin films during sulfurization†
Abstract
This study reports the preparation of CuInS2 (CIS) thin films on Mo-coated glass substrates using in situ sulfurization of thermally evaporated Cu–In precursor films in a thermal evaporation chamber. The precursor films were thermally evaporated at 1.2 × 10−6 Torr and further sulfurization was carried out at 8 Torr of 10% H2S, balanced by Ar. The precursor Cu–In alloy films consist of three types of layered structures with a fixed total thickness of 800 nm. Different temperature–time profiles were used during the sulfurization processes. Various phases in the films were identified using both