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Issue 11, 2011
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Strong photo-response in a flip-chip nanowire p-Cu2O/n-ZnO junction

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Abstract

Cu2O nanoneedles are synthesized on a copper substrate by a simple anodization and reducing ambient annealing protocol. ZnO nanorods are grown on ITO coated glass by a low temperature chemical route. The electronic and photo-response properties of the p-Cu2O/n-ZnO flip-chip heterojunction are then studied and analyzed. We show that the IV characteristic is rectifying and the junction exhibits a good photoresponse (∼120% under 1 V reverse bias) under AM 1.5 (1 Sun) illumination. This nano-heterojunction photo-response is far stronger as compared to that of a pulsed laser deposited thin film p-Cu2O/n-ZnO heterojunction, which can be attributed to higher junction area in the former case.

Graphical abstract: Strong photo-response in a flip-chip nanowire p-Cu2O/n-ZnO junction

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Article information


Submitted
23 Jun 2011
Accepted
31 Aug 2011
First published
14 Oct 2011

Nanoscale, 2011,3, 4706-4712
Article type
Paper

Strong photo-response in a flip-chip nanowire p-Cu2O/n-ZnO junction

M. Deo, S. Mujawar, O. Game, A. Yengantiwar, A. Banpurkar, S. Kulkarni, J. Jog and S. Ogale, Nanoscale, 2011, 3, 4706
DOI: 10.1039/C1NR10665A

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