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Issue 32, 2011
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Fabrication of highly ordered silicon pin-in-a-hole nanostructuresvia chemical etching of nanopatterned polymer masks

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Abstract

We present a new technique to fabricate a highly ordered silicon pin-in-a-hole structure, in which each silicon nanowire is pinned in a hole, by combining polymer sphere arrays induced by Rayleigh instability with chemical etching process. With this process, we were able to create the novel structures that are periodic over very large areas (3 × 3 cm2), where the length of silicon nanowires can be varied by tuning the etching time. A silicon pin-in-a-hole structure was used as the template for preparing polymer nanotubes. And also these structures exhibited a superior anti-reflection property showing specular reflectance of about 0.2%, nearly three orders of magnitude lower than that of a planar silicon wafer.

Graphical abstract: Fabrication of highly ordered silicon pin-in-a-hole nanostructuresvia chemical etching of nanopatterned polymer masks

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Publication details

The article was received on 24 Feb 2011, accepted on 19 May 2011 and first published on 01 Jul 2011


Article type: Paper
DOI: 10.1039/C1JM10812C
J. Mater. Chem., 2011,21, 11996-12000

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    Fabrication of highly ordered silicon pin-in-a-hole nanostructuresvia chemical etching of nanopatterned polymer masks

    H. Park, S. Choi, J. Lee and S. Park, J. Mater. Chem., 2011, 21, 11996
    DOI: 10.1039/C1JM10812C

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