Issue 15, 2011

Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

Abstract

A series of polymers with a comb architecture were prepared where the poly(olefin sulfone) backbone was designed to be highly sensitive to extreme ultraviolet (EUV) radiation, while the well-defined poly(methyl methacrylate) (PMMA) arms were incorporated with the aim of increasing structural stability. It is hypothesized that upon EUV radiation rapid degradation of the polysulfone backbone will occur leaving behind the well-defined PMMA arms. The synthesized polymers were characterised and have had their performance as chain-scission EUV photoresists evaluated. It was found that all materials possess high sensitivity towards degradation by EUV radiation (E0 in the range 4–6 mJ cm−2). Selective degradation of the poly(1-pentene sulfone) backbone relative to the PMMA arms was demonstrated by mass spectrometry headspace analysis during EUV irradiation and by grazing-angle ATR-FTIR. EUV interference patterning has shown that materials are capable of resolving 30 nm 1 : 1 line : space features. The incorporation of PMMA was found to increase the structural integrity of the patterned features. Thus, it has been shown that terpolymer materials possessing a highly sensitive poly(olefin sulfone) backbone and PMMA arms are able to provide a tuneable materials platform for chain scission EUV resists. These materials have the potential to benefit applications that require nanopattering, such as computer chip manufacture and nano-MEMS.

Graphical abstract: Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

Supplementary files

Article information

Article type
Paper
Submitted
30 Sep 2010
Accepted
07 Feb 2011
First published
09 Mar 2011

J. Mater. Chem., 2011,21, 5629-5637

Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

K. J. Lawrie, I. Blakey, J. P. Blinco, H. H. Cheng, R. Gronheid, K. S. Jack, I. Pollentier, M. J. Leeson, T. R. Younkin and A. K. Whittaker, J. Mater. Chem., 2011, 21, 5629 DOI: 10.1039/C0JM03288C

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