Issue 27, 2011

Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

Abstract

Reduced graphene oxide (R-GO) under a positive gate potential (n-type conductance) exhibits an instantaneous response and fast recovery for NH3 sensing, far superior to the performance in p-mode at zero/negative gate potential. Our findings have important implications for fast, repeatable, room temperature gas detection using graphene/R-GO.

Graphical abstract: Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

Supplementary files

Article information

Article type
Communication
Submitted
06 May 2011
Accepted
12 May 2011
First published
06 Jun 2011

Chem. Commun., 2011,47, 7761-7763

Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

G. Lu, K. Yu, L. E. Ocola and J. Chen, Chem. Commun., 2011, 47, 7761 DOI: 10.1039/C1CC12658J

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