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Issue 41, 2010
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Solid–solid transfer of organic semiconductors for field-effect transistor fabrication

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Abstract

We present a simple yet potentially universally applicable method for the solid–solid transfer of organic materials under ambient conditions for the fabrication of organic field-effect transistors. Thermal annealing of sprinkled powders of organic semiconductors on gold patterned SiOx surfaces yielded functional transistors with some of the characteristics comparable to those of solution-processed devices.

Graphical abstract: Solid–solid transfer of organic semiconductors for field-effect transistor fabrication

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Article information


Submitted
07 Jul 2010
Accepted
26 Aug 2010
First published
14 Sep 2010

J. Mater. Chem., 2010,20, 9018-9021
Article type
Communication

Solid–solid transfer of organic semiconductors for field-effect transistor fabrication

M. Treier, E. Orgiu, L. Zalewski, D. Cho, R. Rieger, K. Müllen and P. Samorì, J. Mater. Chem., 2010, 20, 9018
DOI: 10.1039/C0JM02173C

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