Issue 37, 2010
From the journal:

Journal of Materials Chemistry

Antireflection effect of ZnOnanorod arrays

Yen-Chun Chao,a   Cheng-Ying Chen,a   Chin-An Lin,a   Yu-An Daia  and  Jr-Hau He*a  

* Corresponding authors

a Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan (ROC)
E-mail: jhhe@cc.ee.ntu.edu.tw
Fax: +886-2-2367-7467
Tel: +886-2-3366-9646

Abstract

We demonstrate a practical optoelectronic application of ZnO nanorod arrays (NRAs) synthesized by a hydrothermal method serving as an antireflection coating (ARC). ZnO NRAs exhibit broadband and omnidirectional AR characteristics for unpolarized, transverse electric polarized, and transverse magnetic polarized light, which arise from the length variation of NRA profiles. Due to growth on any surface of devices/substrates with ease, ZnO NRAs as the broadband and omnidirectional ARCs can benefit greatly the performance of optoelectronic devices, such as light-emitting diodes and photovoltaics.

Graphical abstract: Antireflection effect of ZnO nanorod arrays

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Article information

DOI
https://doi.org/10.1039/C0JM00516A
Article type
Paper
Submitted
25 Feb 2010
Accepted
09 Jul 2010
First published
17 Aug 2010

J. Mater. Chem., 2010,20, 8134-8138

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Antireflection effect of ZnO nanorod arrays

Y. Chao, C. Chen, C. Lin, Y. Dai and J. He, J. Mater. Chem., 2010, 20, 8134 DOI: 10.1039/C0JM00516A

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