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Issue 1, 2010
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Metal surface nucleated supercritical fluid–solid–solid growth of Si and Ge/SiOx core–shell nanowires

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Abstract

High yields of both single-crystalline Si and Ge/SiOx core–shell nanowires were nucleated and grown in metal reactor cells under high-pressure supercritical fluid conditions, without the addition of catalyst particle seeds or a porous template. Nanowire growth was only achieved when the fluid medium of supercritical CO2 and the organometallic precursors were used in conjunction with a coordinating solvent, trioctylphosphine. The diameter and length of the nanowires are found to be in the ranges of 30 to 60 nm and 1 to 10 µm, respectively. The correlation of nanowire growth with the eutectic binary phase diagrams of the semiconductor–metal and the presence of metal impurities at the base of the synthesized nanowires suggest a supercritical fluid–solid–solid growth mechanism occurring from the reaction cell walls. The nanowires are characterized by transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical characteristics for individually picked nanowires are also investigated by means of mechanical nanoprobing.

Graphical abstract: Metal surface nucleated supercritical fluid–solid–solid growth of Si and Ge/SiOx core–shell nanowires

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Supplementary files

Article information


Submitted
23 Jul 2009
Accepted
28 Sep 2009
First published
03 Nov 2009

J. Mater. Chem., 2010,20, 135-144
Article type
Paper

Metal surface nucleated supercritical fluid–solid–solid growth of Si and Ge/SiOx core–shell nanowires

C. A. Barrett, R. D. Gunning, T. Hantschel, K. Arstila, C. O'Sullivan, H. Geaney and K. M. Ryan, J. Mater. Chem., 2010, 20, 135
DOI: 10.1039/B914950C

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