Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates
Abstract
Thermal stability of Si0.8Ge0.2/
* Corresponding authors
a Department of Physics, National University of Singapore (NUS), Kent Ridge, Singapore 119260
b
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 3 Research Link, Singapore 117602
E-mail:
phytokes@nus.edu.sg
Fax: +65-6777-6126
Tel: +65-6516-1192
c Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BZ, UK
Thermal stability of Si0.8Ge0.2/
Z. Zhang, J. S. Pan, J. Zhang and E. S. Tok, Phys. Chem. Chem. Phys., 2010, 12, 7171 DOI: 10.1039/B927274G
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