Hydrogen effects on the electroluminescence of n-ZnOnanorod/p-GaN film heterojunction light-emitting diodes
Abstract
Through a facile low-temperature solution process, vertically n-type
Maintenance work is planned from 09:00 BST to 12:00 BST on Saturday 28th September 2024.
During this time the performance of our website may be affected - searches may run slowly, some pages may be temporarily unavailable, and you may be unable to access content. If this happens, please try refreshing your web browser or try waiting two to three minutes before trying again.
We apologise for any inconvenience this might cause and thank you for your patience.
* Corresponding authors
a
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People’s Republic of China
E-mail:
dxzhao2000@yahoo.com.cn
Fax: +86-431-4627031
Tel: +86-431-86176322
b Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People’s Republic of China
Through a facile low-temperature solution process, vertically n-type
F. Fang, D. Zhao, B. Li, Z. Zhang and D. Shen, Phys. Chem. Chem. Phys., 2010, 12, 6759 DOI: 10.1039/B919079A
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content