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Issue 6, 2010
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Adsorption and reaction of Rh(CO)2(acac) on Al2O3/Ni3Al(111)

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The Al2O3/Ni3Al(111) surface has been used as a template for the nucleation and growth of rhodium clusters using an organometallic precursor: Rh(CO)2(acac). When Rh(CO)2(acac) is deposited on the Al2O3/Ni3Al(111) surface, the molecule is observed to bind preferentially to specific sites associated with the film superstructure (known as the dot structure) and appears to be stable at temperatures up to 473 K at which point some sintering and aggregation processes begin. Annealing the sample to 673 K results in further sintering of the metal deposits as well as an apparent loss in the coverage of rhodium species possibly due to a combination of desorption and deligation. After annealing to 873 K the coverage of rhodium species decreases by about 50% with respect to the initial deposited coverage. Our results suggest that using an organometallic precursor rather than metal atoms to form deposited metal particles on oxide substrates may result in increased resistance to sintering processes.

Graphical abstract: Adsorption and reaction of Rh(CO)2(acac) on Al2O3/Ni3Al(111)

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Article information

22 Jul 2009
09 Nov 2009
First published
09 Dec 2009

Phys. Chem. Chem. Phys., 2010,12, 1264-1270
Article type

Adsorption and reaction of Rh(CO)2(acac) on Al2O3/Ni3Al(111)

Y. Lei, A. Uhl, C. Becker, K. Wandelt, B. C. Gates, R. Meyer and M. Trenary, Phys. Chem. Chem. Phys., 2010, 12, 1264
DOI: 10.1039/B914323H

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