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Issue 10, 2010
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A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe16S20]8− layer and reduced thermal conductivity

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Abstract

A low band gap iron sulfide hybrid semiconductor with unique layered structure and unusual iron coordination exhibits significantly reduced thermal conductivity.

Graphical abstract: A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe16S20]8− layer and reduced thermal conductivity

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Submitted
28 Sep 2009
Accepted
22 Jan 2010
First published
06 Feb 2010

Chem. Commun., 2010,46, 1649-1651
Article type
Communication

A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe16S20]8− layer and reduced thermal conductivity

M. Wu, J. Rhee, T. J. Emge, H. Yao, J. Cheng, S. Thiagarajan, M. Croft, R. Yang and J. Li, Chem. Commun., 2010, 46, 1649
DOI: 10.1039/B920118A

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