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Issue 9, 2010
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Gas phase controlled deposition of high quality large-area graphene films

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Abstract

A gas phase controlled graphene synthesis resembling a CVD process that does not critically depend on cooling rates is reported. The controllable catalytic CVD permits high quality large-area graphene formation with deft control over the thickness from monolayers to thick graphitic structures at temperatures as low as 750 °C.

Graphical abstract: Gas phase controlled deposition of high quality large-area graphene films

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Publication details

The article was received on 22 Sep 2009, accepted on 13 Jan 2010 and first published on 29 Jan 2010


Article type: Communication
DOI: 10.1039/B919725G
Citation: Chem. Commun., 2010,46, 1422-1424
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    Gas phase controlled deposition of high quality large-area graphene films

    S. Kumar, N. McEvoy, T. Lutz, G. P. Keeley, V. Nicolosi, C. P. Murray, W. J. Blau and G. S. Duesberg, Chem. Commun., 2010, 46, 1422
    DOI: 10.1039/B919725G

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