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Issue 9, 2010
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Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate

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Abstract

Directional controllability of single-walled carbon nanotubes (SWNTs) is an important issue for future nanoelectronics applications. For direct integration of carbon nanotubes with modern electronics, aligned growth of carbon nanotubes on SiO2/Si is desirable. We developed a new method to horizontally align SWNTs directly on SiO2/Si substrate by creating trenches on Si(100) through anisotropic etching followed by thermal oxidation. The V-shaped trenches highly improved the alignment of SWNTs and the degree of alignment is comparable to the step-templated alignment of carbon nanotubes on crystals. The trenches also improved the density of aligned nanotubes due to the combination of “trench-guided” and gas-flow guided alignment. Our new insights on carbon nanotube alignment on SiO2/Si will greatly contribute to future large-scale nanoelectronic applications.

Graphical abstract: Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate

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Supplementary files

Article information


Submitted
04 Mar 2010
Accepted
29 Apr 2010
First published
25 Jun 2010

Nanoscale, 2010,2, 1708-1714
Article type
Paper

Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate

C. M. Orofeo, H. Ago, T. Ikuta, K. Takahasi and M. Tsuji, Nanoscale, 2010, 2, 1708 DOI: 10.1039/C0NR00170H

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