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Issue 13, 2010
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Solvent vapor annealing of an insoluble molecular semiconductor

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Abstract

Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film—pentacene on SiO2 exposed to acetone vapor—using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid–solid transition without noticeable swelling, dissolving or melting of the molecular material.

Graphical abstract: Solvent vapor annealing of an insoluble molecular semiconductor

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Article information


Submitted
06 Nov 2009
Accepted
15 Jan 2010
First published
19 Feb 2010

J. Mater. Chem., 2010,20, 2623-2629
Article type
Paper

Solvent vapor annealing of an insoluble molecular semiconductor

A. Amassian, V. A. Pozdin, R. Li, Detlef-M. Smilgies and G. G. Malliaras, J. Mater. Chem., 2010, 20, 2623
DOI: 10.1039/B923375J

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