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Issue 7, 2010
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Ambipolar all-polymer bulk heterojunction field-effect transistors

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We demonstrate solution processable all-polymer based field-effect transistors (FETs) exhibiting comparable electron and hole mobilities. The semiconducting layer is a bulk heterojunction of poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (n-type polymer) and regioregular poly(3-hexylthiophene) (p-type polymer). These polymers form a type-II heterojunction as revealed by the faster photoluminescence dynamics of the blend compared to the pristine materials. An electron mobiliy of 4 × 10−3 cm2/V s and a hole mobility of 2 × 10−3 cm2/V s were extracted from the transfer characteristics of bottom contact FETs. The balanced mobilities suggest that the active layer is a fine network of the two components, as confirmed by atomic force microscopy phase images.

Graphical abstract: Ambipolar all-polymer bulk heterojunction field-effect transistors

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Article information

21 Sep 2009
06 Nov 2009
First published
03 Dec 2009

J. Mater. Chem., 2010,20, 1317-1321
Article type

Ambipolar all-polymer bulk heterojunction field-effect transistors

K. Szendrei, D. Jarzab, Z. Chen, A. Facchetti and M. A. Loi, J. Mater. Chem., 2010, 20, 1317
DOI: 10.1039/B919596C

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