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Issue 37, 2010
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Band-offset engineering in organic/inorganic semiconductor hybrid structures

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Abstract

Control over the electronic structure of organic/inorganic semiconductor interfaces is required to realize hybrid structures with tailored opto-electronic properties. An approach towards this goal is demonstrated for a layered hybrid system composed of p-sexiphenyl (6P) and ZnO. The molecular orientation can be switched from “upright-standing” to “flat-lying” by tuning the molecule–substrate interactions through aggregation on different crystal faces. The morphology change has profound consequences on the offsets between the molecular frontier energy levels and the semiconductor band edges. The combination of ZnO surface dipole modification through molecule adsorption and the orientation-dependence of the ionization energy of molecular layers shift these offsets by 0.7 eV. The implications for optimizing hybrid structures with regard to exciton and charge transfer are discussed.

Graphical abstract: Band-offset engineering in organic/inorganic semiconductor hybrid structures

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Article information


Submitted
06 Apr 2010
Accepted
30 Jun 2010
First published
16 Aug 2010

Phys. Chem. Chem. Phys., 2010,12, 11642-11646
Article type
Paper

Band-offset engineering in organic/inorganic semiconductor hybrid structures

S. Blumstengel, H. Glowatzki, S. Sadofev, N. Koch, S. Kowarik, J. P. Rabe and F. Henneberger, Phys. Chem. Chem. Phys., 2010, 12, 11642
DOI: 10.1039/C004944C

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