Jump to main content
Jump to site search

Issue 7, 2010
Previous Article Next Article

Step-by-step growth of highly oriented and continuous seeding layers of [Cu2(ndc)2(dabco)] on bare oxide and nitride substrates

Author affiliations

Abstract

The step-by-step growth of highly oriented and continuous thin films of [Cu2(ndc)2(dabco)] (1) at 50 °C was studied and compared with growth directly from solvothermal mother solution at 120 °C. The substrates were bare unmodified SiO2, Al2O3 grown by atomic layer deposition (ALD), Ta2O5 and Si3N4. The deposited layers of 1 were characterized via in-plane and out-of-plane X-ray powder diffraction (PXRD) and Scanning Electron Microscopy (SEM). The stepwise film formation process was studied by the variation of the reaction conditions and washing procedures indicating an island growth mode and the importance of storage effects. The highly oriented layers obtained by the step-by-step method were used as seeds for the deposition of thicker films of 500–700 nm with the same orientation directly from solvothermal mother solution.

Graphical abstract: Step-by-step growth of highly oriented and continuous seeding layers of [Cu2(ndc)2(dabco)] on bare oxide and nitride substrates

Back to tab navigation

Supplementary files

Article information


Submitted
23 Dec 2009
Accepted
24 Feb 2010
First published
23 Mar 2010

CrystEngComm, 2010,12, 2086-2090
Article type
Paper

Step-by-step growth of highly oriented and continuous seeding layers of [Cu2(ndc)2(dabco)] on bare oxide and nitride substrates

K. Yusenko, M. Meilikhov, D. Zacher, F. Wieland, C. Sternemann, X. Stammer, T. Ladnorg, C. Wöll and R. A. Fischer, CrystEngComm, 2010, 12, 2086
DOI: 10.1039/B927212G

Social activity

Search articles by author

Spotlight

Advertisements