Issue 10, 2009

Controlled synthesis of pure and highly dispersive Cu(ii), Cu(i), and Cu(0)/MCM-41 with Cu[OCHMeCH2NMe2]2/MCM-41 as precursor

Abstract

Cu(II)/MCM-41, Cu(I)/MCM-41 and Cu(0)/MCM-41 materials were prepared with Cu[OCHMeCH2NMe2]2/MCM-41 as precursor under controlled conditions. The states of copper on the resulting samples were characterized by temperature programmed reduction (TPR), UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS), X-ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), infrared spectroscopy (FTIR) of NO and CO adsorption, X-ray diffraction (XRD), and N2 adsorption. It was shown that pure Cu(II)/MCM-41 can be acquired by calcining Cu[OCHMeCH2NMe2]2/MCM-41 in pure oxygen at 573 K. Pure Cu(I)/MCM-41 can be obtained by reducing the as-prepared Cu(II)/MCM-41 in a CO/He atmosphere at 473 K, while pure Cu(0)/MCM-41 can be obtained viareduction of the Cu(II)/MCM-41 in a CO/He atmosphere at 673 K. The Cu(II)–O and Cu(I)–O species were showed to be highly dispersed on the surface of MCM-41 as isolated sites. The study provides an alternative method for the preparation of pure copper metal or copper oxide supported materials.

Graphical abstract: Controlled synthesis of pure and highly dispersive Cu(ii), Cu(i), and Cu(0)/MCM-41 with Cu[OCHMeCH2NMe2]2/MCM-41 as precursor

Article information

Article type
Paper
Submitted
31 Mar 2009
Accepted
15 Jun 2009
First published
20 Jul 2009

New J. Chem., 2009,33, 2044-2050

Controlled synthesis of pure and highly dispersive Cu(II), Cu(I), and Cu(0)/MCM-41 with Cu[OCHMeCH2NMe2]2/MCM-41 as precursor

G. Zhang, J. Long, X. Wang, W. Dai, Z. Li, L. Wu and X. Fu, New J. Chem., 2009, 33, 2044 DOI: 10.1039/B906352H

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