Preparation of SiO2 beads with highly luminescent and magnetic nanocrystalsvia a modified reverse micelle process
Abstract
Sol–gel-derived SiO2 beads (100–200 nm) encapsulating highly luminescent semiconductor
* Corresponding authors
a
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Midorigaoka, Ikeda City, Japan
E-mail:
n-murase@aist.go.jp
Sol–gel-derived SiO2 beads (100–200 nm) encapsulating highly luminescent semiconductor
P. Yang, M. Ando and N. Murase, New J. Chem., 2009, 33, 1457 DOI: 10.1039/B901538H
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