Issue 19, 2009
From the journal:

Journal of Materials Chemistry

One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

Xiang-Yu Wang,a   Hua-Zhang Zhai,*a   Chuan-Bao Cao,a   Hong-Nian Cai,a   Yu Wangb  and  Helen L. W. Chanb  

* Corresponding authors

a School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, P R China
E-mail: huazhzhai@bit.edu.cn
Tel: +0086-10-68913469

b Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong SAR, P R China

Abstract

SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.

Graphical abstract: One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

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Article information

DOI
https://doi.org/10.1039/B820954E
Article type
Paper
Submitted
24 Nov 2008
Accepted
24 Feb 2009
First published
16 Mar 2009

J. Mater. Chem., 2009,19, 2958-2962

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One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

X. Wang, H. Zhai, C. Cao, H. Cai, Y. Wang and H. L. W. Chan, J. Mater. Chem., 2009, 19, 2958 DOI: 10.1039/B820954E

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